Matys M., Kaneki S., Nishiguchi K., Adamowicz B., Hashizume T., 2017. Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors. Journal of Applied Physics122(22). https://doi.org/10.1063/1.5000497[Scopus - Elsevier]
Matys M., Stoklas R., Blaho M., Adamowicz B., 2017. Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition. Applied Physics Letters110(24). https://doi.org/10.1063/1.4986482[Scopus - Elsevier]
Matys M., Stoklas R., Kuzmik J., Adamowicz B., Yatabe Z., Hashizume T., 2016. Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures. Journal of Applied Physics119(20). https://doi.org/10.1063/1.4952708[Scopus - Elsevier]
Matys M., Adamowicz B., Zytkiewicz Z.R., Taube A., Kruszka R., Piotrowska A., 2016. High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films. Applied Physics Letters109(5). https://doi.org/10.1063/1.4960484[Scopus - Elsevier]
Matys M., Adamowicz B., Domanowska A., Michalewicz A., Stoklas R., Akazawa M., Yatabe Z., Hashizume T., 2016. On the origin of interface states at oxide/III-nitride heterojunction interfaces. Journal of Applied Physics120(22). https://doi.org/10.1063/1.4971409[Scopus - Elsevier]
Matys M., Adamowicz B., Hashizume T., 2013. A novel method for the determination of the full energetic distribution of interface state density in metal/insulator/GaN structures from capacitance - Voltage and photocapacitance - Light intensity measurements. AIP Conference Proceedings1566: 57–58. https://doi.org/10.1063/1.4848283[Scopus - Elsevier]
Matys M., Adamowicz B., Hori Y., Hashizume T., 2013. Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O 3/AlGaN/GaN by photocapacitance method. Applied Physics Letters103(2). https://doi.org/10.1063/1.4813407[Scopus - Elsevier]
Matys M., Powroznik P., Kupka D., Adamowicz B., 2013. Two-dimensional modeling of surface photovoltage in metal/insulator/n-GaN structure with cylindrical symmetry. Optica Applicata43(1): 47–52. https://doi.org/10.5277/oa130106[Scopus - Elsevier]
Matys M., Adamowicz B., Hashizume T., 2012. Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement. Applied Physics Letters101(23). https://doi.org/10.1063/1.4769815[Scopus - Elsevier]
Wierzbowska K., Adamowicz B., Lauron B., Bideux L., 2012. Role of interface states and depletion layer in NO2sensing mechanism of n-InP epitaxial layers. Sensors and Actuators, A: Physical181: 43–50. https://doi.org/10.1016/j.sna.2012.05.007[Scopus - Elsevier]
Domanowska A., Miczek M., Ucka R., Matys M., Adamowicz B., Zywicki J., Taube A., Korwin-Mikke K., Gierałtowska S., Sochacki M., 2012. Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures. Applied Surface Science258(21): 8354–8359. https://doi.org/10.1016/j.apsusc.2012.03.172[Scopus - Elsevier]
Domanowska A., Adamowicz B., Bidziński P., Klimasek A., Szewczenko J., Gutt T., Przewłocki H., 2011. Analysis of chemical shifts in Auger electron spectra versus sputtering time from passivated surfaces. Optica Applicata41(2): 441–447. [Scopus - Elsevier]
Bidzinski P., Miczek M., Adamowicz B., Mizue C., Hashizume T., 2011. Impact of interface states and bulk carrier lifetime on photocapacitance of metal/insulator/GaN structure for ultraviolet light detection. Japanese Journal of Applied Physics50(4 PART 2). https://doi.org/10.1143/JJAP.50.04DF08[Scopus - Elsevier]
Miczek M., Bidziński P., Adamowicz B., Mizue C., Hashizume T., 2011. The influence of interface states and bulk carrier lifetime on the minority carrier behavior in an illuminated metal/insulator/GaN structure. Solid State Communications151(11): 830–833. https://doi.org/10.1016/j.ssc.2011.03.021[Scopus - Elsevier]
Adamowicz B., Miczek M., Bidzinski P., Hashizume T., 2010. Modeling of metal/insulator/GaN ultraviolet photodetector by finite element method. 4th Microwave and Radar Week, MRW-2010 - 18th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2010 - Conference Proceedings. [Scopus - Elsevier]
Hasegawa H., Akazawa M., Domanowska A., Adamowicz B., 2010. Surface passivation of III-V semiconductors for future CMOS devices-Past research, present status and key issues for future. Applied Surface Science256(19): 5698–5707. https://doi.org/10.1016/j.apsusc.2010.03.091[Scopus - Elsevier]
Akazawa M., Domanowska A., Adamowicz B., Hasegawa H., 2009. Capacitance-voltage and photoluminescence study of high- k/GaAs interfaces controlled by Si interface control layer. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures27(4): 2028–2035. https://doi.org/10.1116/1.3167361[Scopus - Elsevier]
Miczek M., Adamowicz B., Mizue C., Hashizume T., 2009. Simulations of capacitance-voltage-temperature behavior of Metal/Insulator/AlGaN and Metal/Insulator/AlGaN/GaN structures. Japanese Journal of Applied Physics48(4 PART 2). https://doi.org/10.1143/JJAP.48.04C092[Scopus - Elsevier]
Tomkiewicz P., Arabasz S., Adamowicz B., Miczek M., Mizsei J., Zahn D.R.T., Hasegawa H., Szuber J., 2009. Surface electronic properties of sulfur-treated GaAs determined by surface photovoltage measurement and its computer simulation. Surface Science603(3): 498–502. https://doi.org/10.1016/j.susc.2008.12.009[Scopus - Elsevier]
Wierzbowska K., Bideux L., Adamowicz B., Pauly A., 2008. A novel III-V semiconductor material for NO2detection and monitoring. Sensors and Actuators, A: Physical142(1): 237–241. https://doi.org/10.1016/j.sna.2007.02.021[Scopus - Elsevier]
Miczek M., Mizue C., Hashizume T., Adamowicz B., 2008. Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors. Journal of Applied Physics103(10). https://doi.org/10.1063/1.2924334[Scopus - Elsevier]
Adamowicz B., Izydorczyk W., Izydorczyk J., Klimasek A., Jakubik W., Zywicki J., 2008. Response to oxygen and chemical properties of SnO2thin-film gas sensors. Vacuum82(10): 966–970. https://doi.org/10.1016/j.vacuum.2008.01.003[Scopus - Elsevier]
Wierzbowska K., Adamowicz B., Lauron B., Pauly A., Bideux L., 2008. Rigorous analysis of electronic properties and AFM studies of oxidising gas sensitive n-InP epitaxial layers. Journal of Physics: Conference Series100(PART 7). https://doi.org/10.1088/1742-6596/100/7/072016[Scopus - Elsevier]
Tomkiewicz P., Adamowicz B., Miczek M., Hasegawa H., Szuber J., 2008. Surface state density distribution at vacuum-annealed InP(1 0 0) surface as derived from the rigorous analysis of photoluminescence efficiency. Applied Surface Science254(24): 8046–8049. https://doi.org/10.1016/j.apsusc.2008.03.020[Scopus - Elsevier]
Adamowicz B., Miczek M., Hashizume T., Klimasek A., Bobek P., Zywicki J., 2007. Capacitance-voltage and Auger chemical profile studies on AlGaN/GaN structures passivated by SiO2/Si3N4and SiNx/Si3N4bilayers. Optica Applicata37(4): 327–334. [Scopus - Elsevier]
Izydorczyk W., Adamowicz B., 2007. Computer analysis of oxygen adsorption at SnO2 thin films. Optica Applicata37(4): 377–386. [Scopus - Elsevier]
Izydorczyk W., Adamowicz B., Miczek M., Waczynski K., 2006. Computer analysis of an influence of oxygen vacancies on the electronic properties of the SnO 2 surface and near-surface region. Physica Status Solidi (A) Applications and Materials Science203(9): 2241–2246. https://doi.org/10.1002/pssa.200566016[Scopus - Elsevier]
Hasegawa H., Sato T., Kasai S., Adamowicz B., Hashizume T., 2006. Dynamics and control of recombination process at semiconductor surfaces, interfaces and nano-structures. Solar Energy80(6): 629–644. https://doi.org/10.1016/j.solener.2005.10.014[Scopus - Elsevier]
Arabasz S., Adamowicz B., Petit M., Gruzza B., Robert-Goumet Ch., Piwonski T., Bugajski M., Hasegawa H., 2006. Room temperature photoluminescence studies of nitrided InP(100) surfaces. Materials Science and Engineering C26(2-3): 378–382. https://doi.org/10.1016/j.msec.2005.10.032[Scopus - Elsevier]
Wierzbowska K., Pauly A., Adamowicz B., Bideux L., 2006. Studies of gas sensing, electrical and chemical properties of n-InP epitaxial surfaces. Physica Status Solidi (A) Applications and Materials Science203(9): 2281–2286. https://doi.org/10.1002/pssa.200566030[Scopus - Elsevier]
Benamara Z., Mecirdi N., Bouiadjra B.B., Bideux L., Gruzza B., Robert C., Miczek M., Adamowicz B., 2006. XPS, electric and photoluminescence-based analysis of the GaAs (1 0 0) nitridation. Applied Surface Science252(22): 7890–7894. https://doi.org/10.1016/j.apsusc.2005.09.056[Scopus - Elsevier]
Wierzbowska K., Adamowicz B., Mazet L., Brunet J., Pauly A., Bideux L., Varenne C., Berry L., Germain J.-P., 2005. High-sensitivity NO2 sensor based on n-type InP epitaxial layers. Optica Applicata35(4): 655–662. [Scopus - Elsevier]
Miczek M., Adamowicz B., Hashizume T., Hasegawa H., 2005. Influence of surface states and bulk traps on non-equilibrium phenomena at GaAs and GaN surfaces. Optica Applicata35(4): 355–362. [Scopus - Elsevier]
Petit M., Robert-Goumet C., Bideux L., Gruzza B., Matolin V., Arabasz S., Adamowicz B., Wawer D., Bugajski M., 2005. Passivation of InP(100) substrates: First stages of nitridation by thin InN surface overlayers studied by electron spectroscopies. Surface and Interface Analysis37(7): 615–620. https://doi.org/10.1002/sia.2045[Scopus - Elsevier]
Miczek M., Adamowicz B., Hasegawa H., 2002. Characterization of electronic properties of InP(100) surfaces from computer-aided analysis of photoluminescence. Optica Applicata32(3): 227–233. [Scopus - Elsevier]
Miczek M., Adamowicz B., Hasegawa H., 2002. Determination of InP surface state density distribution from excitation-power-dependent photoluminescence spectra using genetic algorithm-based fitting procedure. Surface Science507-510: 240–244. https://doi.org/10.1016/S0039-6028(02)01253-0[Scopus - Elsevier]
Adamowicz B., Miczek M., Arabasz S., Hasegawa H., 2002. Rigorous analysis of photoluminescence efficiency for characterisation of electronic properties of InP(1 0 0) surfaces. Vacuum67(1): 3–10. https://doi.org/10.1016/S0042-207X(02)00194-X[Scopus - Elsevier]
Szuber J., Czempik G., Larciprete R., Adamowicz B., 2000. Comparative XPS and PYS studies of SnO2thin films prepared by L-CVD technique and exposed to oxygen and hydrogen. Sensors and Actuators, B: Chemical70(1-3): 177–181. https://doi.org/10.1016/S0925-4005(00)00564-5[Scopus - Elsevier]
Adamowicz B., Miczek M., Hasegawa H., 2000. Computer analysis of the Fermi level behaviour at SiO2/n-Si and SiO2/n-GaAs interfaces. Electron Technology (Warsaw)33(1): 249–252. [Scopus - Elsevier]
Bilski M., Kaszczyszyn S., Grzadziel L., Adamowicz B., Szuber J., 2000. Surface photovoltage spectroscopy system for in situ studies of metal phthalocyanine thin films. Electron Technology (Warsaw)33(1): 289–291. [Scopus - Elsevier]
Adamowicz B., Miczek M., Ikeya K., Mutoh M., Saitoh T., Fujikura H., Hasegawa H., 1999. Electronic properties of AlxGa1-xAs surface passivated by ultrathin silicon interface control layer. Applied Surface Science141(3-4): 326–332. https://doi.org/10.1016/S0169-4332(98)00519-4[Scopus - Elsevier]
Adamowicz B., Hasegawa H., 1998. Computer analysis of surface recombination process at Si and compound semiconductor surfaces and behavior of surface recombination velocity. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers37(3 SUPPL. B): 1631–1637. [Scopus - Elsevier]
Adamowicz B., Ikeya K., Mutoh M., Saitoh T., Fujikura H., Hasegawa H., 1998. Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer. Physica E: Low-Dimensional Systems and Nanostructures2(1-4): 261–266. https://doi.org/10.1016/S1386-9477(98)00055-1[Scopus - Elsevier]
Adamowicz B., Grilli M.L., Pedio M., Ottaviani C., Campo A., Capozi M., Quaresima C., Perfetti P., 1995. Inverse photoemission and Kelvin probe studies of the Au/GaP(110) interface. Vacuum46(5-6): 509–512. https://doi.org/10.1016/0042-207X(94)00118-9[Scopus - Elsevier]
Adamowicz B., Kochowski S., 1988. The contribution of surface effects to the surface photovoltage dependence on temperature for the real Si(111) surface. Surface Science200(2-3): 172–178. https://doi.org/10.1016/0039-6028(88)90517-1[Scopus - Elsevier]