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Division of Applied Physics

starszy specjalista nauk.-tech.
ul. Konarskiego 22B/105
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+48 32 237 2044, +48 32 237 2076
Miscellaneous Information:


  • Bodzenta Jerzy, Kazmierczak-Balata Anna, Bukowski Roman, Nowak Marian, Solecka Barbara, 2017. Numerical Modeling of Photothermal Experiments on Layered Samples with Mirage-Effect Signal Detection. International Journal of Thermophysics 38(6). https://doi.org/10.1007/s10765-017-2219-5 [ResearcherID]
  • Starczewska A., Solecka B., Nowak M., Szperlich P., 2014. Dielectric Properties of SbSI in the Temperature Range of 292-475 K. Acta Physica Polonica a 126(5): 1125–1127. https://doi.org/10.12693/APhysPolA.126.1125 [ResearcherID]
  • Nowak M., Solecka B., Jesionek M., 2014. Photoelectromagnetic Investigations of Graphene. Acta Physica Polonica a 126(5): 1104–1106. https://doi.org/10.12693/APhysPolA.126.1104 [ResearcherID]
  • Nowak M., Szperlich P., Talik E., Szala J., Rzychon T., Stroz D., Nowrot A., Solecka B., 2010. Sonochemical preparation of antimony subiodide. Ultrasonics Sonochemistry 17(1): 219–227. https://doi.org/10.1016/j.ultsonch.2009.05.016 [ResearcherID]
  • Dercz J., Dercz G., Prusik K., Solecka B., Starczewska A., Ilczuk J., 2010. Influence of primary milling on structural and electrical properties of Bi4Ti3O12ceramics obtained by sintering process. International Journal of Thermophysics 31(1): 42–54. https://doi.org/10.1007/s10765-009-0691-2 [Scopus - Elsevier]
  • Duka P., Nowak M., Solecka B., 2003. Influence of acoustooptical modulation of laser radiation on the results of contactless photoelectromagnetic investigations. Proceedings of SPIE - The International Society for Optical Engineering 5229: 329–333. [Scopus - Elsevier]
  • Nowak M, Solecka B, 2000. Application of high-frequency contactless method of PEM investigations to examine near-surface layer of Si and GaAs. Vacuum 57(2): 237–242. https://doi.org/10.1016/S0042-207X(00)00118-4 [ResearcherID]
  • Kepinska M., Nowak M., Okuniewicz S., Solecka B., 1998. Optical and photoelectrical investigations of Ge20Se69Bi11 thin films. Electron Technology (Warsaw) 31(3-4): 417–419. [Scopus - Elsevier]

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