FB Find Us on Facebook

Division of Solid State Physics

Department of Solid State PhysicsHead: Marian Nowak, Prof. PhD hab. Eng.

Address

ul. Krasińskiego 8
40-019 Katowice
phones: 32 603 41 67, 32 603 41 56
fax: 32 603 43 70
e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

Equipment

    • Lasers,
    • setup for growth of SbSI and related compounds by sonochemical methods,
    • systems for measurements of optical reflection, transmission, photoconductivity, and photoreflection.

Publications

List of publications:

2015-2020

2010-2014

2005-2009

2000-2004

  • Zelechower M., Grecka J., Weszka J., Kepinska M., 2004. The corrected value of the Y Lα mass absorption coefficient in silicon. Microchimica Acta 145(1-4): 271–273. https://doi.org/10.1007/s00604-003-0166-2 [Scopus - Elsevier]
  • Duka P, Nowak M, Solecka B, Wolinski WL, Jankiewicz Z, Romaniuk R, 2003. Influence of acoustooptical modulation of laser radiation on the results of contactless photoelectromagnetic investigations. Laser Technology Vii: Applications of Lasers 5229: 329–333. https://doi.org/10.1117/12.520772 [ResearcherID]
  • Duka P., Nowak M., Solecka B., 2003. Influence of acoustooptical modulation of laser radiation on the results of contactless photoelectromagnetic investigations. Proceedings of SPIE - The International Society for Optical Engineering 5229: 329–333. [Scopus - Elsevier]
  • Nowak M, Szperlich P, Kidawa A, Kepinska M, Gorczycki P, Kauch B, Rutkowski J, Rogalski A, 2003. Optical and photoelectrical properties of SbSI. Solid State Crystals 2002: Crystalline Materials For Optoelectronics 5136: 172–177. https://doi.org/10.1117/12.518846 [ResearcherID]
  • Adamiec J., Grabowski A., Lisiecki A., 2003. Joining of an Ni-Al alloy by means of laser beam welding. Proceedings of SPIE - The International Society for Optical Engineering 5229: 215–218. [Scopus - Elsevier]
  • Adamiec J., Grabowski A., Lisiecki A., 2003. Welding of an intermetallic Fe-Al phase based alloy with a diode laser. Proceedings of SPIE - The International Society for Optical Engineering 5229: 219–222. [Scopus - Elsevier]
  • Nowak M., Szperlich P., Kidawa A., Kepińska M., Gorczycki P., Kauch B., 2002. Optical and photoelectrical properties of SbSI. Proceedings of SPIE - The International Society for Optical Engineering 5136: 172–177. [Scopus - Elsevier]
  • Kepinska M, Murri R, Nowak M, 2002. Surface and bulk values of real part of refractive index of GaSe. Vacuum 67(1): 143–147. https://doi.org/10.1016/S0042-207X(02)00191-4 [ResearcherID]
  • Jarzabek B, Jurusik J, Cisowski J, Nowak M, 2001. Roughness of amorphous Zn-P thin films. Optica Applicata 31(1): 93–101. [ResearcherID]
  • Jarzabek B., Jurusik J., Cisowski J., Nowak M., 2001. Roughness of amorphous Zn-P thin films. Optica Applicata 31(1): 93–101. [Scopus - Elsevier]
  • Kȩpińska M., Nowak M., Kovalyuk Z., Murri R., 2001. Temperature dependence of optical energy gap of gallium selenide. Journal of Wide Bandgap Materials 8(3-4): 251–259. https://doi.org/10.1106/152451102024668 [Scopus - Elsevier]
  • Kȩpińska M., Nowak M., Szalajko M., Murri R., 2001. Temperature dependence of optical parameters of gallium sulphide. Journal of Wide Bandgap Materials 8(3-4): 241–249. https://doi.org/10.1106/152451102024667 [Scopus - Elsevier]
  • Nowak M, Solecka B, 2000. Application of high-frequency contactless method of PEM investigations to examine near-surface layer of Si and GaAs. Vacuum 57(2): 237–242. https://doi.org/10.1016/S0042-207X(00)00118-4 [ResearcherID]
  • Nowak M., Starczewska A., 2000. Influence of electron states parameters on results of SSPG measurements. Electron Technology (Warsaw) 33(3): 412–415. [Scopus - Elsevier]
  • Grabowski A, Nowak M, Wolinski W, Jankiewicz Z, 2000. Modification of the optical and electronics parameters a-Si : H as a result of annealed with a CO2 laser radiation.. Laser Technology Vi: Applications 4238: 174–179. https://doi.org/10.1117/12.405973 [ResearcherID]
  • Duka P., Gluza J., Zralek M., 2000. Quantization and renormalization of the manifest left-right symmetric model of electroweak interactions. Annals of Physics 280(2): 336–408. https://doi.org/10.1006/aphy.1999.5988 [Scopus - Elsevier]

1990-1999

  • Kochowski S, Nowak M, 1999. An analysis of small-signal response of the SiO2-(n) GaAs interface based on a surface disorder model. Vacuum 54(1-4): 183–188. https://doi.org/10.1016/S0042-207X(98)00457-6 [ResearcherID]
  • Augelli V, Nowak M, 1999. Distribution of radiation intensity in a thin semiconductor film on a thick substrate. Thin Solid Films 338(1-2): 188–196. https://doi.org/10.1016/S0040-6090(98)00949-3 [ResearcherID]
  • Augelli V., Nowak M., 1999. Distribution of radiation intensity in a thin semiconductor film on a thick substrate. Thin Solid Films 338(1-2): 188–196. [Scopus - Elsevier]
  • Nowak M, Starczewska A, 1999. Influence of spatial distribution of radiation on steady-state photocarrier grating measurement. Journal of Non-Crystalline Solids 260(1-2): 41–53. https://doi.org/10.1016/S0022-3093(99)00559-1 [ResearcherID]
  • Grabowski A, Jaglarz J, Nowak M, 1998. Angular distribution of intensity of reflected radiation investigations of the influence of CO2 laser treatment on optical properties of hydrogenated amorphous silicon. Optics and Laser Technology 30(3-4): 183–187. https://doi.org/10.1016/S0030-3992(98)00031-0 [ResearcherID]
  • Grabowski A., Jaglarz J., Nowak M., 1998. Angular distribution of intensity of reflected radiation investigations of the influence of CO2 laser treatment on optical properties of hydrogenated amorphous silicon. Optics and Laser Technology 30(3-4): 183–187. [Scopus - Elsevier]
  • Kepinska M, Nowak M, 1998. Comparison of optical constants and average thickness of inhomogeneous rough thin films obtained from special dependences of optical transmittance and reflectance. Ndt & E International 31(2): 105–110. https://doi.org/10.1016/S0963-8695(97)00016-9 [ResearcherID]
  • Kȩpińska M., Nowak M., 1998. Comparison of optical constants and average thickness of inhomogeneous rough thin films obtained from special dependences of optical transmittance and reflectance. NDT and E International 31(2): 105–110. [Scopus - Elsevier]
  • Nowak M., Starczewska A., 1998. Determining of diffusion length of carriers in thin films of a-Si:H using SSPG technique. Electron Technology (Warsaw) 31(3-4): 420–424. [Scopus - Elsevier]
  • Jaglarz J., Nowak M., 1998. Investigations of a-Si thin films using new technique of variable angle reflectometry (VAR). Electron Technology (Warsaw) 31(3-4): 405–408. [Scopus - Elsevier]
  • Kepinska M., Nowak M., Wilk E., 1998. Investigations of layered semiconductors using photoreflectance. Electron Technology (Warsaw) 31(3-4): 342–345. [Scopus - Elsevier]
  • Jaglarz J, Nowak M, 1998. Investigations of spatial distributions of intensity of radiation reflected from thin films which are inhomogeneous over thickness. Journal of Modern Optics 45(12): 2451–2460. [ResearcherID]
  • Jaglarz J., Nowak M., 1998. Investigations of spatial distributions of intensity of radiation reflected from thin films which are inhomogeneous over thickness. Journal of Modern Optics 45(12): 2451–2460. https://doi.org/10.1080/09500349808230498 [Scopus - Elsevier]
  • Jaglarz J, Nowak M, 1998. New technique of VAR investigations of thin films on thick substrates. Ndt & E International 31(5): 341–347. https://doi.org/10.1016/S0963-8695(98)00017-6 [ResearcherID]
  • Jaglarz J., Nowak M., 1998. New technique of VAR investigations of thin films on thick substrates. NDT and E International 31(5): 341–347. [Scopus - Elsevier]
  • Kepinska M., Nowak M., Okuniewicz S., Solecka B., 1998. Optical and photoelectrical investigations of Ge20Se69Bi11 thin films. Electron Technology (Warsaw) 31(3-4): 417–419. [Scopus - Elsevier]
  • Grabowski A., Nowak M., 1998. Optical properties of magnetron sputtered a-Si:H treated with a CO2 laser. Electron Technology (Warsaw) 31(3-4): 401–404. [Scopus - Elsevier]
  • Duka P., Gluza J., Zrałek M., 1998. Influence of the left-handed part of the neutrino mass matrix on the lepton number violating (Formula Presented) process. Physical Review D - Particles, Fields, Gravitation and Cosmology 58(5). https://doi.org/10.1103/PhysRevD.58.053009 [Scopus - Elsevier]
  • Duka P., Gluza J., Zrałek M., 1998. Influence of the left-handed part of the neutrino mass matrix on the lepton number violating e-e-→W-W- process. Physical Review D - Particles, Fields, Gravitation and Cosmology 58(5): 530091–530095. [Scopus - Elsevier]
  • Duka P., Gluza J., Zralek M., 1998. Influence of the left-handed part of the neutrino mass matrix on the lepton number violating ee-→W-W-process. Physical Review D 58(5). [Scopus - Elsevier]
  • Jaglarz J., Nowak M., 1997. ADIRR investigations of temperature dependence of optical properties of a-Si. Electron Technology (Warsaw) 30(2): 213–215. [Scopus - Elsevier]
  • Kochowski S., Nowak M., 1997. Analysis of MIS GaAs capacitance versus frequency data using least-squares method. Electron Technology (Warsaw) 30(2): 109–112. [Scopus - Elsevier]
  • Nowak M., 1997. Determination of density of states in a-Si:H,F thin films using spectral, temperature and illumination intensity dependencies of photoconductivity. Electron Technology (Warsaw) 30(2): 222–224. [Scopus - Elsevier]
  • Loncierz B, Nowak M, Rogalski A, Rutkowski J, Majchrowski A, Zielinski J, 1997. Determining carrier lifetime using frequency dependence in contactless photoelectromagnetic investigations of GaAs:Te,GaAs:Si and MQW on GaAs. Solid State Crystals in Optoelectronics and Semiconductor Technology 3179: 151–157. https://doi.org/10.1117/12.276215 [ResearcherID]
  • Grabowski A., Nowak M., 1997. Influence of CO2 laser annealing of optoelectronical parameters of a-Si:H. Electron Technology (Warsaw) 30(2): 145–148. [Scopus - Elsevier]
  • Nowak M., 1997. Influence of spatial distribution of radiation on photoconductivity and photoelectromagnetic effect in a thin semiconductor film. Electron Technology (Warsaw) 30(2): 216–221. [Scopus - Elsevier]
  • Kepinska M, Nowak M, Rogalski A, Rutkowski J, Majchrowski A, Zielinski J, 1997. Optical and recombination parameters of GaSe obtained from interference spectroscopy of transmittance, reflectance, photoconductivity and photomagnetoelectric responses. Solid State Crystals in Optoelectronics and Semiconductor Technology 3179: 147–150. https://doi.org/10.1117/12.276214 [ResearcherID]
  • Jaglarz J, Nowak M, 1996. Determination of optical constants and average thickness of thin films on thick substrates using angular distribution of intensity of reflected radiation. Thin Solid Films 278(1-2): 124–128. https://doi.org/10.1016/0040-6090(95)08183-6 [ResearcherID]
  • Jaglarz J., Nowak M., 1996. Determination of optical constants and average thickness of thin films on thick substrates using angular distribution of intensity of reflected radiation. Thin Solid Films 278(1-2): 124–128. [Scopus - Elsevier]
  • Grabowski A, Nowak M, Tzanetakis P, 1996. Determination of recombination and photogeneration parameters of a-Si:H using photoconductivity measurements. Thin Solid Films 283(1-2): 75–80. https://doi.org/10.1016/0040-6090(95)08558-0 [ResearcherID]
  • Grabowski A., Nowak M., Tzanetakis P., 1996. Determination of recombination and photogeneration parameters of a-Si:H using photoconductivity measurements. Thin Solid Films 283(1-2): 75–80. [Scopus - Elsevier]
  • Los S., Nowak M., 1996. Influence of surface layer damaging on photoelectromagnetic effect. Electron Technology (Warsaw) 29(1): 45–49. [Scopus - Elsevier]
  • NOWAK M, 1995. DETERMINATION OF OPTICAL-CONSTANTS AND AVERAGE THICKNESS OF INHOMOGENEOUS-ROUGH THIN-FILMS USING SPECTRAL DEPENDENCE OF OPTICAL TRANSMITTANCE. Thin Solid Films 254(1-2): 200–210. https://doi.org/10.1016/0040-6090(94)06268-P [ResearcherID]
  • LONCIERZ B, MURRI R, NOWAK M, 1995. DETERMINING CARRIER LIFETIME USING FREQUENCY-DEPENDENCE IN CONTACTLESS PHOTOELECTROMAGNETIC INVESTIGATIONS OF SEMICONDUCTORS. Thin Solid Films 266(2): 274–277. https://doi.org/10.1016/0040-6090(96)80033-2 [ResearcherID]
  • NOWAK M, 1995. LINEAR DISTRIBUTION OF INTENSITY OF RADIATION REFLECTED FROM AND TRANSMITTED THROUGH A THIN-FILM ON A THICK SUBSTRATE. Thin Solid Films 266(2): 258–262. https://doi.org/10.1016/0040-6090(96)80030-7 [ResearcherID]
  • NOWAK M, 1994. DISTRIBUTION OF RADIATION INTENSITY IN A SEMICONDUCTOR FILM. Optical Engineering 33(5): 1501–1510. https://doi.org/10.1117/12.168372 [ResearcherID]
  • Czyz H., Duka P., Zrałek M., 1994. What do we count in the e+e-→Z neutrino counting experiment?. Physical Review D 49(9): 4941–4944. https://doi.org/10.1103/PhysRevD.49.4941 [Scopus - Elsevier]
  • KACZMARSKA K, PIERRE J, SLEBARSKI A, STARCZEWSKA A, 1993. STRUCTURAL, MAGNETIC AND ESR PROPERTIES OF (GD-R)T2SN2 COMPOUNDS. Journal of Magnetism and Magnetic Materials 127(1-2): 151–158. https://doi.org/10.1016/0304-8853(93)90209-K [ResearcherID]

older than 1990

Staff members:

  • Phone: +48 32 603 4264

    Piotr Duka, PhD Eng.
    starszy wykładowca
    This email address is being protected from spambots. You need JavaScript enabled to view it.

  • Phone: +48 32 603 4188

    Andrzej Grabowski, PhD hab. Eng.
    adiunkt z habilitacją
    This email address is being protected from spambots. You need JavaScript enabled to view it.

  • Phone: +48 32 603 4156

    Marcin Jesionek, PhD
    adiunkt
    This email address is being protected from spambots. You need JavaScript enabled to view it.

  • Phone: +48 32 603 4188

    Mirosława Kępińska, PhD hab.
    adiunkt
    This email address is being protected from spambots. You need JavaScript enabled to view it.

  • Phone: +48 32 603 4156

    Krystian Mistewicz, PhD Eng.
    doktorant
    This email address is being protected from spambots. You need JavaScript enabled to view it.

  • Phone: +48 32 603 4167

    Marian Nowak, Prof. PhD hab. Eng.
    profesor zwyczajny
    This email address is being protected from spambots. You need JavaScript enabled to view it.

  • Phone: +48 32 603 4156

    Pawel Solecki
    inż.-tech.
    This email address is being protected from spambots. You need JavaScript enabled to view it.

  • Phone: +48 32 603 4188

    Anna Starczewska, PhD hab
    adiunkt
    This email address is being protected from spambots. You need JavaScript enabled to view it.

  • Phone: +48 32 603 4153

    Piotr Szperlich, PhD Eng.
    adiunkt
    This email address is being protected from spambots. You need JavaScript enabled to view it.

  • Phone: +48 32 603 4153

    Bartłomiej Toroń, PhD Eng.
    asystent
    This email address is being protected from spambots. You need JavaScript enabled to view it.

Go to top