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Department of Surface Physics and Nanostructures - archive staff

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ul. B. Krzywoustego 2/420
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+48 32 237 2736
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Research groups


  • Chihoko Mizue, Yujin Hori, Marcin Miczek, Tamotsu Hashizume, 2011. Capacitance-Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface. Japanese Journal of Applied Physics 50, 2: 21001, DOI 10.1143/JJAP.50.021001
  • Marcin Miczek, Piotr Bidziński, Bogusława Adamowicz, Chihoko Mizue, Tamotsu Hashizume, 2011. The influence of interface states and bulk carrier lifetime on the minority carrier behavior in an illuminated metal/insulator/GaN structure. Solid State Communications 151, 11: 830-833, DOI 10.1016/j.ssc.2011.03.021
  • Piotr Bidzinski, Marcin Miczek, Boguslawa Adamowicz, Chihoko Mizue, Tamotsu Hashizume1, 2011. Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection. Japanese Journal of Applied Physics 50, 4: 04DF08, DOI 10.1143/JJAP.50.04DF08
  • C. Mizue, M. Miczek, J. Kotani, T. Hashizume, 2009. UV-Induced Variation of Interface Potential in AlOx/n-GaN Structure. Japanese Journal of Applied Physics 48: 20201, DOI 10.1143/JJAP.48.020201
  • P. Tomkiewicz, S. Arabasz, B. Adamowicz, M. Miczek, J. Mizsei, D.R.T. Zahn, H. Hasegawa, J. Szuber, 2009. Surface electronic properties of sulfur-treated GaAs determined by surface photovoltage measurement and its computer simulation. Surface Science 603, 3: 498-502
  • M. Miczek, C. Mizue, T. Hashizume, B. Adamowicz, 2008. Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors. Journal of Applied Physics 103: 104510, DOI 10.1063/1.2924334
  • K. Ooyama, H. Kato, M. Miczek, T. Hashizume, 2008. Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure. Japanese Journal of Applied Physics 47: 5426-5428, DOI 10.1143/JJAP.47.5426
  • M. Miczek, B. Adamowicz, C. Mizue, T. Hashizume, 2008. Simulations of Capacitance–Voltage–Temperature Behavior of Metal/Insulator/AlGaN and Metal/Insulator/AlGaN/GaN Structures. Japanese Journal of Applied Physics 48: 04C092, DOI 10.1143/JJAP.48.04C092
  • P. Tomkiewicz, B. Adamowicz, M. Miczek, H. Hasegawa, J. Szuber, 2008. Surface state density distribution at vacuum-annealed InP(100) surface as derived from the rigorous analysis of photoluminescence efficiency. Applied Surface Science 254, 24: 8046-8049
  • B. Adamowicz, M. Miczek, T. Hashizume, A. Klimasek, P. Bobek (Bidziński), J. Żywicki, 2007. Capacitance-voltage and Auger chemical profile studies on AlGaN/GaN structures passivated by SiO2/Si3N4 and SiNx/Si3N4 bilayers. Optica Applicata 37, 4: 327-334
  • C. Mizue, T. Matsuyama, J. Kotani, M. Miczek, T. Hashizume, 2007. UV-response characteristics of insula-tor/n-GaN MIS structures for sensor application. IEICE Technical Report 107, no. 2: 43-46
  • W. Izydorczyk, B. Adamowicz, M. Miczek, K. Waczyński, 2006. Computer analysis of an influence of oxygen vacancies on the electronic properties of the SnO2 surface and near-surface region. Physica Status Solidi A 203, 9: 2241-2246
  • Z. Benamara, N. Mecirdi, B. Bachir Bouiadjra, L. Bideux, B. Gruzza, C. Robert, M. Miczek, B. Adamowicz, 2006. XPS, electric and photoluminescence-based analysis of the GaAs (100) nitridation. Applied Surface Science 252, 22: 7890-7894
  • H. Kato, M. Miczek, T. Hashizume, 2006. C-V characterization of GaN-based MIS structures at high temperatures. IEICE Technical Report 105, 521: 13-16
  • M. Miczek, B. Adamowicz, T. Hashizume, H. Hasegawa, 2005. Influence of surface states and bulk traps on non-equilibrium phenomena at GaAs and GaN surfaces. Optica Applicata 35, 3: 355-361
  • , 2004. O pewnym prostym zadaniu z teorii względności. Foton 86: 46-47
  • B. Adamowicz, M. Miczek, C. Brun, B. Gruzza, H. Hasegawa, 2003. Rigorous analysis of the electronic properties of InP interfaces for gas sensing. Thin Solid Films 436, 1: 101-106
  • M. Miczek, B. Adamowicz, H. Hasegawa, 2002. Determination of InP surface state density distribution from excitation-power-dependent photoluminescence spectra using genetic-algorithm-based fitting procedure. Surface Science 507-510: 240-244
  • B. Adamowicz, M. Miczek, S. Arabasz, H. Hasegawa, 2002. Rigorous analysis of photoluminescence efficiency for characterisation of electronic properties of InP(100) surfaces. Vacuum 67, 1: 3-10
  • M. Miczek, B. Adamowicz, H. Hasegawa, 2002. Characterization of electronic properties of InP(100) surfaces from computer-aided analysis of photoluminescence. Optica Applicata 32, 3: 227-233
  • M. Miczek, B. Adamowicz, J. Szuber, H. Hasegawa, 2001. Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum. Vacuum 63, 1-2: 223-227
  • B. Adamowicz, M. Miczek, T. Domagała, H. Hasegawa, 2001. Determination of the surface state density distribution and Fermi level position on the InP(100) surface from excitation-power-dependent photoluminescence efficiency spectra. Elektronika 42, 8-9: 76-78
  • B. Adamowicz, M. Miczek, H. Hasegawa, 2000. Computer analysis of the Fermi level behavior at SiO2/n-Si and SiO2/n-GaAs Interfaces. Electron Technology 33: 249-252
  • B. Adamowicz, M. Miczek, K. Ikeya, M. Mutoh, T. Saitoh, H. Fujikura, H. Hasegawa, 1999. Electronic properties of AlxGa1-xAs surface passivated by ultrathin silicon interface control layer. Applied Surface Science 141, 3-4: 326-332
  • M. Miczek, T. Pustelny, 1997. Electroacoustic transducers working in the audible range of frequency. Molecular and Quantum Acoustics 18: 193-207
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